Fabrication of 12 pieces of photodiode heterostructure based on gallium-indium arsenide on 3” InP substrates for the detection of electromagnetic waves with a length of 2.6 µm

By: ŁUKASIEWICZ RESEARCH NETWORK - INSTITUTE OF MICROELECTRONICS AND PHOTONICS📍 PolandOpen

Key Information

ReferenceGB-2026/BZP 00376791/01
DeadlineAug 4, 2027 12:00 AM
CategoryAdvertising & Media
Competition TypeICB
Funding SourceSelf-Funded
CountryPoland
PublishedAug 4, 2026

Description

Procurement Bulletin : Fabrication of 12 pieces of photodiode heterostructure based on gallium-indium arsenide on 3” InP substrates for the detection of electromagnetic waves with a length of 2.6 µm

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