Chemical Beam Epitaxy (CBE) Growth System for III-V Semiconductors

By: Jessica Canas๐Ÿ“ CanadaOpen

Key Information

ReferenceGB-26-58143
DeadlineNov 9, 2026 12:00 AM
CategoryAdvertising & Media
Competition TypeICB
Funding SourceFunded
CountryCanada
Address2620 Speakman Drive, Mississauga, Ontario, L5K1B4, Canada
PublishedOct 14, 2026

Description

Chemical Beam Epitaxy (CBE) Growth System for III-V Semiconductors

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