Dopant Selective Deep Reactive Ion Etching Of 4H-Sic Wafer
By: Lindsey McLellan,Karen Artis📍 United StatesClosed
Key Information
| Reference | GB-80NSSC27946811Q |
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| Deadline | Oct 16, 2026 12:00 AM |
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| Competition Type | ICB |
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| Funding Source | Self-Funded |
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| Country | United States |
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| Address | ,None,,-Contact Person: Lindsey Mclellan,Karen Artis,, Country:- United States of America |
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| Published | Oct 13, 2026 |
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Description
Dopant Selective Deep Reactive Ion Etching Of 4H-Sic Wafer <p>NASA/NSSC has a requirement for Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer. See attached SOW for full details of the requ...
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